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Space or military electronic devices are subject to both electromagnetic fields and total ionizing dose. The reliability of a discrete low frequency transistor is addressed by means of electromagnetic susceptibility measurements after total ionizing dose. The bipolar transistors under test are subject to high frequency interferences in the near-field zone with 100MHz-1.5GHz signals. For comparison, the electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in a common emitter configuration. The goal is to predict the reliability of simple devices on a mission time scale.