By Topic

Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kim, Hong-Yeol ; Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, South Korea ; Kim, Jihyun ; Liu, Lu ; Lo, Chien-Fong
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3676034 

The authors report the proton energy dependence of the degradation of AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers from 5 to 15 MeV at a fixed dose of 5 × 1015 cm-2. All the samples degraded after proton irradiation. However, higher damage in dc electrical properties was observed at lower proton energies. Saturation currents at VDS = 6 V and VGS = 0 V reduced by 47% after proton irradiation at 5 MeV energy, but the reduction was less by 25% and 9% at 10 and 15 MeV, respectively. Similar trends were observed in other electrical properties [transconductance (gm) and gate leakage currents]. This energy dependence from 5 to 15 MeV can be explained by the energy-dependent penetration depth of the proton. Protons with higher kinetic energy can penetrate deeper while creating less numbers of defects at shallow depths where the active layers of the HEMTs are located. These results are in good agreement with stopping and range of ions in matter results. The optimization of the AlGaN/GaN HEMT structure will be critical for space-borne applications where high fluxes of protons are encountered.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 1 )