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In recent years, progress in processing and crystal growth methods have led to a significant increase in the mobility-lifetime product of electrons in thallium bromide (TlBr). This has enabled single carrier collection devices with thickness greater than 1-cm to be fabricated. In this paper we report on our latest results from pixellated devices with depth correction as well as our initial results with Frisch collar devices. After applying depth corrections, energy resolution of approximately 2% (FWHM at 662 keV) was obtained from a 13-mm thick TlBr array operated at -18°C and under continuous bias and irradiation for more than one month. Energy resolution of 2.4% was obtained at room temperature with an 8.4-mm thick TlBr Frisch collar device.