By Topic

Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Youngjun Park ; Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea ; Kwang-Soon Ahn ; Kim, Hyunsoo

The carrier transport mechanisms of Ni/Ag/Pt contacts to moderately Mg-doped p-GaN (sample A) and highly Mg-doped p-GaN (sample B) were investigated. Depending on the Mg doping concentration, the dominant carrier transport mechanism could be categorized as thermionic field emission for sample A and carrier transport through the deep-level defect (DLD) band for sample B, resulting in different specific contact resistances of 7.1 × 10-2 and 7.0 × 10-4 Ωcm2 for samples A and B, respectively. For sample A, the contact parameters, including a Schottky barrier height of 0.94 eV and a tunneling parameter of 0.045 eV, could be observed, yielding the substantial interfacial carriers of 4.5 ×1019 cm-3 and, hence, field emission through a thin barrier. For sample B, the effective barrier height associated with the DLD band was suggested to be an important parameter since the carrier transport predominantly occurred through the DLD band rather than the valence band. Accordingly, the effective barrier height was calculated to be 0.12 eV, which was low enough to explain the excellent ohmic contact.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 3 )