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Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

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3 Author(s)
Jun Wang ; Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD, USA ; Seyyed Sadegh Mottaghian ; Mahdi Farrokh Baroughi

This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO2) and aluminum oxide (Al2O3) layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal-oxide-semiconductor model and results from capacitance-voltage measurements, the density of fixed charges (Nf) and the density of interface traps (Dit) at the HfO2/Si and Al2O3/Si interfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 2 )