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Sensing mechanism in receptor-modified organic field effect transistor based vapor sensors

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3 Author(s)
Davianne Duarte ; Microelectronics Research Center, The University of Texas at Austin, 78758, USA ; Ananth Dodabalapur ; Bradley J. Holliday

In this paper we report on the sensing mechanism in organic field effect transistor based vapor sensors modified with solution deposited receptor molecules. The incorporation of the receptor molecule increases the partition coefficient and/or the ability of the analyte to produce a significant shift in the device properties such as mobility and threshold voltage through dipole interactions. The exposure of the receptor to certain analytes produces a large increase in the dipole moment which leads to an increase in the interaction energy and an increase in trapping effects.

Published in:

Sensors, 2011 IEEE

Date of Conference:

28-31 Oct. 2011