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A carbon nanotube gas sensor using CMOS-based platform

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5 Author(s)
Wei-Cheng Tian ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hung-Ling Lu ; Chun-Yen Kuo ; Chia-Jung Lu
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A complementary metal-oxide-semiconductor (CMOS)-based gas sensor platform using a commercially available 0.35 μm CMOS process and the microelectromechanical systems (MEMS) post process was developed in this work. An n-type polysilicon microheater with ~2 kΩ and a metal thermometer with ~1 kΩ were integrated within this platform to provide a temperature programming for sensing film preparations and sensor characterizations. After the standard CMOS process, a freestanding micro hotplate was fabricated via an isotropic silicon dry etching. The rapid thermal response (<;1 s) and an uniform heating distribution (100°C, standard deviation of 1°C) of this sensor platform were demonstrated. The sensing material was prepared with the mixing of commercially available single-walled carbon nanotubes (SWCNTs) and an organic solvent. Our sensors were tested with three compounds (Octane, Butanol, and Butylacetate) and the good linearity and fast response time (<;5 s) were demonstrated. The great sensor sensitivities of the three compounds were obtained (Octane: 0.329 ppm/ppm, Butanol: 0.522 ppm/ppm, and Butylacetate: 0.683 ppm/ppm) at a high concentration range (>;1K ppm) and could be used to enhance the specificity of the SWCNTs-based gas sensor.

Published in:
Sensors, 2011 IEEE

Date of Conference: 28-31 Oct. 2011

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