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In this paper we present a fully integrated, high yielding, high reliability DC contact microelectromechanical systems (MEMS) switch technology. A high voltage double-diffused metal-oxide-semiconductor (DMOS) driver application-specific integrated circuit (ASIC) is co-packaged with a single-pole-four-throw (SP4T) DC contact MEMS switch in a 5×4×1mm 24-pin quad flat no leads (QFN) plastic package. The MEMS switch process yields >;90% on 6 inch wafers and plastic package devices have been subjected to standard IC qualification testing as well as MEMS switch specific lifetime testing over -40°C to 85°C with industry leading results. The MEMS switch is actuated with 80V generated by the control ASIC and exhibits cycle lifetime of >; 3 Billion (3×109) cycles when toggled at 5 kHz. The switches are targeted at radio frequency (RF) switching applications and have insertion loss/isolation of 0.4dB/25dB at 6 GHz. Key challenges overcome were, design of the MEMS switch to ensure high yield and reliability, low thermal sensitivity under the influence of the packaging process, optimization of the contact system, and design of the actuation waveform to enhance lifetime.