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Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode: A comparative study

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9 Author(s)
M. Shafiei ; School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia ; J. Yu ; M. Breedon ; N. Motta
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In this paper, a comparative study of Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors is presented. MoO3 nanostructured films with three different morphologies (nanoplatelets, nanoplatelets-nanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen gas at temperatures up to 250°C. Results indicate that the sensor based on MoO3 nano-flowers exhibited the highest sensitivity (in terms of a 5.79V voltage shift) towards 1% hydrogen; while the sensor based on MoO3 nanoplatelets showed the quickest response (t90%-40s).

Published in:

Sensors, 2011 IEEE

Date of Conference:

28-31 Oct. 2011