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Integration of inverted ingaas MSM array on Si substrate through low temperature wafer bonding

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3 Author(s)
Wu, P. ; Electr., Comput., & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA ; Liao, J. ; Huang, Z.R.

An array of inverted InGaAs metal-semiconductor-metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In-Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 μm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM measured prior to bonding while the dark current reduces slightly after bonding.

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Electronics Letters  (Volume:48 ,  Issue: 1 )