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Electrothermally Actuated and Piezoelectrically Sensed Silicon Carbide Tunable MEMS Resonator

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4 Author(s)
B. Svilicic ; Scottish Microelectronics Centre, Institute for Integrated Micro and Nano Systems, School of Engineering, The University of Edinburgh, Edinburgh, U.K. ; E. Mastropaolo ; B. Flynn ; R. Cheung

In this letter, we present the design, fabrication, and electrical testing of a silicon carbide microelectromechanical (MEMS) resonant device with electrothermal actuation and piezoelectric sensing. A doubly clamped flexural-mode beam resonator made of cubic silicon carbide has been fabricated with a top platinum electrothermal actuator and a top lead zirconium titanate piezoelectric sensor. Electrothermal transduction has been used to drive the device into resonance and tune its frequency. Piezoelectric transduction has been used as resonance sensing technique. Electrical measurements have shown that, by increasing the dc bias of the actuating voltage from 1 to 7 V, a tuning range of 171 kHz can be achieved with a device resonating at 1.766 MHz.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 2 )