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Effect of ballast-resistor and field-screening on electron-emission from nanodiamond emitters fabricated on micropatterned silicon pillar arrays

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4 Author(s)
Ghosh, N. ; Department of Electrical Engineering, Vanderbilt University, Nashville, Tennessee 37235 ; Kang, W.P. ; Davidson, J.L. ; Raina, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3674284 

This paper describes the influence of ballast-resistor and field-screening on the electron field-emission behavior of nanodiamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars capped with nanodiamond with different ballast resistances and pillar separations have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nanodiamond field emission behaviors.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 1 )