Cart (Loading....) | Create Account
Close category search window
 

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kamineni, Himani S. ; College of Nanoscale Science and Engineering, University at Albany, 255 Fuller Road, Albany, New York, 12203, USA ; Kamineni, Vimal K. ; Moore, Richard L. ; Gallis, Spyros
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3675278 

Thermal oxidation effects on the structural, compositional, and optical properties of erbium films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and spectroscopic ellipsometry. A gradual rise in oxidation temperature from 700 to 900 °C resulted in a transition from ErO- to Er2O3-rich phase. Additional increase in oxidation temperature above 1000°C led to the formation of erbium silicate due to further oxygen incorporation, as well as silicon out-diffusion from the substrate. A silicon oxide interfacial layer was also detected, with its thickness increasing with higher oxidation temperature. Additionally, film refractive index decreased, while its Tauc bandgap value increased from ∼5.2 eV to ∼6.4 eV, as the oxidation temperature was raised from 700 °C to above 900 °C. These transformations were accompanied by the appearance of an intense and broad absorption band below the optical gap. Thermal oxidation effects are discussed in the context of film structural characteristics and defect states.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 1 )

Date of Publication:

Jan 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.