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High speed and high power AlGaN/GaN MODFETs

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10 Author(s)
Wu, Y.-F. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Keller, B.P. ; Keller, S. ; Nguyen, N.X.
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Device optimization of AlGaN/GaN MODFETs has resulted in a record high f/sub T/ of 50 GHz for a GaN based FET and a record high CW power density of 2.54/spl sim/2.84 W/mm in X band for a solid-state FET.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997