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High current and transconductance AlGaN/GaN MODFETs at elevated temperatures

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7 Author(s)
Aktas, O. ; Illinois Univ., Urbana, IL, USA ; Fan, Z.F. ; Lu, C. ; Botchkarev, A.
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The high electron peak and saturation velocity and a large breakdown field attributes of GaN combined with its good thermal conductivity and stability make it a suitable material for electrical devices intended for high power applications. The wide band gap of GaN leads to low intrinsic carrier concentration enabling a more precise control of free carrier concentration over a wide range of temperatures. In this paper we present AIGaN/GaN double heterostructure channel MODFET exhibiting record dc performance at room and elevated temperatures.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997