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Demonstration of a velocity modulated transistor

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4 Author(s)
E. B. Cohen ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; K. J. Webb ; D. B. Janes ; M. R. Melloch

We report the design, fabrication and initial testing of the first velocity modulation transistor (VMT), a high speed device proposed by Sakaki in 1982. Our VMTs are built on a GaAs/Al/sub x/Ga/sub 1-x/As heterostructure with 70 nm separating a high mobility 2 dimensional electron gas (2DEG) and a lower mobility, doped channel grown at a slightly reduced temperature. The mobility ratio between the 2DEG and the low mobility channel was measured to be 2.5:1 at 300 K when the channels are both fully populated. Real space transfer, which is central to the operation of the VMT, has been verified in the heterostructure under DC operation using a three-gated device created for this purpose. We have fabricated a VMT structure with top and bottom gates and performed DC measurements to determine optimum operating conditions.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997