By Topic

A novel three-terminal negative differential conductance device in silicon: the hot-electron phonon-emission field-effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Koester, S.J. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Ismail, K. ; Lee, K.Y. ; Chu, J.O.

In this work, we describe the operation of a novel, three-terminal, laterally patterned NDC device fabricated in a high-mobility strained Si quantum well. We call this device a hot-electron phonon-emission field-effect transistor (HEPEFET), because the NDC is caused by phonon emission of energetic electrons injected into a constricted geometry. We describe the characteristics of the HEPEFET, and point out some of the features that make it potentially attractive for future high-density circuit applications.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997