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Temperature compensation technique of GaAs FET by rotating the gate orientation

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6 Author(s)
Furukawa, H. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Tanaka, T. ; Fukui, T. ; Tateoka, K.
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It is well known that GaAs power FET occasionally shows thermal runaway. There are some explanations about this effect, such as increase of leakage current and lowering the potential barrier of the gate as the increase of temperature. We found such effect is closely related to the gate orientation for the first time. Based on this characteristics of GaAs FET, we demonstrate temperature compensation technique of GaAs power amplifier just by rotating the gate orientation of the FET.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997