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High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications

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10 Author(s)
Wang, Y.C. ; Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA ; Kuo, J.M. ; Lothian, J.R. ; Ren, F.
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In the RF transmit/receive block of a wireless personal communication system, the power amplifiers consume the largest battery power. To reduce the size and power consumption of the systems, the demand for low supply voltage power transistors with high efficiency is growing for portable wireless communication applications. High electron mobility transistors (HEMTs) are an excellent candidate for such applications due to their high maximum drain current, low knee voltage and high cutoff frequencies. In this talk we demonstrate a high efficiency and low supply voltage power transistor for portable wireless communication applications using a new In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P-In/sub 0.2/Ga/sub 0.8/As double-heterojunction pseudomorphic HEMT (DHPHEMT).

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997

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