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Fully self-aligned tri-layer a-Si:H TFT with ultra-thin active layer

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2 Author(s)
Thomasson, D.B. ; Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA ; Jackson, T.N.

To the best of our knowledge, the simple processing method described is the first fully self-aligned trilayer TFT with deposited n/sup +/ contacts. This process requires one less mask than our standard tri-layer process, with one additional unmasked backside exposure. In addition, these fully self-aligned TFTs have an ultra-thin a-Si:H layer that results in improved performance.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997