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Summary form only given. CMOS is a very attractive technology for digital circuits because it offers full rail-to-rail output swings and greater noise margins than NMOS circuits. CMOS also provides active loads for linear circuits. Implementation of CMOS in silicon carbide (SiC) devices is expected to provide reliable circuits for high temperature operation. However, previous implementations of CMOS in SiC resulted in very high PMOS threshold voltages. This requires a high supply voltage, which is not desirable for high temperature operations. In this paper, we present the first CMOS digital IC in 6H-SiC to operate with a single 5 V power supply.