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Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

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8 Author(s)
Ulloa, J.M. ; Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain ; Reyes, D.F. ; Montes, M. ; Yamamoto, K.
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The possibility of an independent tuning of the electron and hole confinement in InAs/GaAs quantum dots (QDs) by using a thin GaAsSbN capping layer (CL) is studied. By controlling the Sb and N contents in the quaternary alloy, the band structure of the QDs can be broadly tuned and converted from type-II in the valence band (high Sb contents) to type-I and to type-II in the conduction band (high N contents). Nevertheless, the simultaneous presence of Sb and N is found to induce strain and composition inhomogeneities in the CL and to degrade the photoluminescence of the structure.

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Applied Physics Letters  (Volume:100 ,  Issue: 1 )