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A trimless, 0.5V–1.0V wide voltage operation, high density SRAM macro utilizing dynamic cell stability monitor and multiple memory cell access

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12 Author(s)
Kushida, K. ; Center for Semicond. R&D, Toshiba Corp. Semicond. Co., Kawasaki, Japan ; Hirabayashi, O. ; Tachibana, F. ; Hara, H.
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A low power SRAM operating at the logic supply voltage of 0.5V-1.0V without chip by chip trimming has been developed. A Dynamic Cell Stability Monitor controls wordline level adaptively by sensing the data flip in reference memory cells. The cell failure rate in every process corner is improved. A Modulated Wordline Level Scheme for Replica Cell optimizes sense timing and the operating frequency is improved by 18% at 1.0V. A Multiple Memory Cell Access Mode pushes the minimum operating cell supply voltage down to 0.5V. A 40nm 2Mb SRAM test chip with 0.24um2 cell has demonstrated 0.5V operation.

Published in:

Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian

Date of Conference:

14-16 Nov. 2011