Highly mismatched ZnTe1-xOx(ZnTeO) alloys have been grown by molecular beam epitaxy. X-ray diffraction (XRD) analyses showed that a single-phase ZnTeO layer were grown with a substitutional O composition x up to 1.34% on ZnTe(001) substrate in this experiments. Optical transitions associated with the lower (E-) and upper (E+) conduction subbands resulting from the anticrossing interaction between the localized O states and the extended conduction states of ZnTe were clearly observed, and the dependence of the energy position of these bands on the O composition was consistent with the band anticrossing model.
Published in:
Applied Physics Letters
(Volume:100
,
Issue:
1
)
Date of Publication:
Jan 2012
- Page(s):
-
011905
-
011905-3
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.3674310
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
09 January 2012
- Issue Date :
-
Jan 2012