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HfSiO Bulk Trap Density Controls the Initial V_{\rm th} in nMOSFETs

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8 Author(s)
Sahhaf, S. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Degraeve, R. ; Srividya, V. ; De Brabanter, K.
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The underlying physical mechanism of the Vth adjustment of nMOSFETs with HfSiO/TiN gate stack obtained by As and Ar implantation is investigated. It is experimentally proved that the trapped charge in the HfSiO bulk defects controls the initial Vth value in nMOSFETs. The reduction of the charged trap density in HfSiO by implant explains the tuned Vth values.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:12 ,  Issue: 2 )

Date of Publication:

June 2012

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