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On the design of balanced carbon nanotube field-effect transistor gates

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2 Author(s)
Dev, K. ; ECE Dept., Rice Univ., Houston, TX, USA ; Massoud, Y.

In this paper, we analyze the compact models for carbon nanotube field-effect transistors (CNTFET) and observe that the logic-gates implemented using CNTFET with unoptimized device parameter have asymmetric voltage transfer characteristic. We propose the design of a balanced inverter circuit implemented using CNTFET devices. The proposed inverter circuit is functional over a wide range of supply voltage, from sub-threshold voltage to nominal supply voltage.

Published in:

Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on

Date of Conference:

11-14 Dec. 2011

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