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This article provides a guideline towards estimating the design value(s) of the shunt-peaking inductor(s) used in a wide-band CMOS amplifier system. Mathematical analysis and numerical technique followed by circuit simulation, have been used to demonstrate the feasibility of the approach. The procedure applied to a common-gate amplifier in 0.5 micron CMOS technology produces a simulation result with 51.8 dBΩ gain, 4.32 GHz bandwidth, a peaking <; 1dB, with 2.8 mW of DC power. Similarly, the design of an interstage PI configuration of inductors, demonstrates a -3dB bandwidth of 37 GHz, peaking <;0.3 dB with a total inductance of 2.24 nH.