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High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

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5 Author(s)
Q. Chen ; APA Opt. Inc., Blaine, MN ; J. W. Yang ; M. A. Kahn ; A. T. Ping
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Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25 μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39 V was also obtained

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Electronics Letters  (Volume:33 ,  Issue: 16 )