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Transverse thermoelectric response in tilted orientation La1-xSrxCoO3 (0.05 ≤ x ≤ 0.4) thin films

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4 Author(s)
Wang, Y. ; Institute of Advanced Materials for Photoelectrons, Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650051, China ; Yu, L. ; Jiang, B. ; Zhang, P.X.

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La1-xSrxCoO3 (0.05 ≤ x ≤ 0.4) thin films with tilted c-axis have been grown on vicinal cut LaAlO3 (100) substrates by pulse laser deposition. The single phase and the epitaxial growth of these thin films have been checked by x-ray diffraction analysis. Transverse thermoelectric voltage response in these films has been studied at room temperature by using a pulse laser as the thermal source. The maximum voltage response has been observed in La0.7Sr0.3CoO3 films in this series of oxides, with the responsivity of 1.23 V/mJ in 10° tilted film. The resistivity and the thermal diffusivity have been reckoned as the main physical parameters to determine the time response of establishment and decay processes of transverse thermoelectric voltage, respectively. Smaller resistivity leads to fast response speed to establish the voltage, while larger thermal diffusivity results in the fast decay of voltage.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 12 )