Referenced Items are not available for this document.
External cavity semiconductor lasers are demonstrated using a single-angled-facet semiconductor laser diode that does not require anti-reflection coating. A wide tuning bandwidth (7%, λ=980 nm), large side-mode suppression ratio (50 dB, λ=1590 nm), narrow linewidth (50 kHz), and high output power (13.5 mW) are achieved with conventional external cavity configurations
Published in:
Electronics Letters
(Volume:33
,
Issue:
16
)
Date of Publication: 31 Jul 1997
- Page(s):
- 1387 - 1389
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5667275
- Digital Object Identifier :
- 10.1049/el:19970911
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 31 Jul 1997
- Sponsored by :
- Institution of Engineering and Technology
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