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Single-angled-facet laser diode for widely tunable external cavity semiconductor lasers with high spectral purity

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7 Author(s)
Heim, P.J.S. ; Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA ; Fan, Z.F. ; Cho, S.H. ; Nam, K.
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External cavity semiconductor lasers are demonstrated using a single-angled-facet semiconductor laser diode that does not require anti-reflection coating. A wide tuning bandwidth (7%, λ=980 nm), large side-mode suppression ratio (50 dB, λ=1590 nm), narrow linewidth (50 kHz), and high output power (13.5 mW) are achieved with conventional external cavity configurations

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Electronics Letters  (Volume:33 ,  Issue: 16 )