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Browse Journals & Magazines > Electronics Letters ...> Volume:33 Issue:16 Help

Room-temperature pulsed operation of 1.3 μm GaInNAs/GaAs laser diode

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4 Author(s)
Sato, S. ; Gen. Electron. Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan ; Osawa, Y. ; Saitoh, T. ; Fujimura, I.

A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 μm at room-temperature under pulsed operation is demonstrated

Published in:
Electronics Letters  (Volume:33 ,  Issue: 16 )

Date of Publication: 31 Jul 1997

Page(s):
1386 - 1387
ISSN :
0013-5194
INSPEC Accession Number:
5667274
Digital Object Identifier :
10.1049/el:19970935
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
31 Jul 1997
Sponsored by :
Institution of Engineering and Technology

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