Referenced Items are not available for this document.
A novel surface potential-based mobility degradation model for thin-oxide-MOSFET is presented. With surface potential, the effective normal electric field can be accurately calculated, and a new mobility expression is developed. Comparison with measured data is also presented to validate our model.
Published in:
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Date of Conference: 17-18 Nov. 2011
- Page(s):
- 1 - 2
- ISSN :
- Pending
- E-ISBN :
- 978-1-4577-1996-7
- Print ISBN:
- 978-1-4577-1998-1
- INSPEC Accession Number:
- 12461493
- Conference Location :
- Tianjin
- Digital Object Identifier :
- 10.1109/EDSSC.2011.6117739
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