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Impact of stress on band-to-band tunneling current in SOI MOSFET based on first-principles calculation

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7 Author(s)
Li, Y.Z. ; Sch. of Electron. & Inf. Eng., Soochow Univ., Suzhou, China ; Zhang, L.J. ; Wang, Z.O. ; Chen, Z.
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The effect of hydrostatic tensile stress on the band structures of silicon have been theoretically investigated based on the first-principles calculation. The calculations demonstrate that the electron effective mass for stressed structure becomes 3.71% smaller than that for unstressed, whereas the band gap for stressed structure is 4.96% larger than unstressed one. At last, the impact of these changes on band-to-band tunneling leakage current in silicon-on-insulator MOSFET was calculated. And the calculated result shows that the tunneling leakage current decreases due to these changes.

Published in:

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Date of Conference:

17-18 Nov. 2011