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A compact threshold voltage model for the novel high-speed semiconductor device IMOS

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6 Author(s)
Yuchen Li ; Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China ; Heming Zhang ; Huiyong Hu ; Xiaobo Xu
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IMOS allows very sharp subthreshold slopes, down to a few mV/dec. A threshold voltage model is proposed in different distribution of surface electric field and in the condition of avalanche breakdown. Model verification is carried out using ISE. Good agreement is obtained between the model's calculations and the simulated results.

Published in:

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Date of Conference:

17-18 Nov. 2011