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A fully integrated 0.18 µm SiGe BiCMOS low power 60 GHz receiver & transmitter for high data rate wireless communications

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9 Author(s)
Kiat Seng Yeo ; Nanyang Technological University, Singapore ; Kok Meng Lim ; Jiangmin Gu ; Jinna Yan
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In this paper, a 60 GHz low power RX and TX front ends are presented. The RX has more than 19 dB of gain between 58.2 and 67.8 GHz, an average NF of 8.7 across the frequency band of interest, and a P1dB of -24.4 dBm. The high performance RX chip only consumes 32.6 mW of power, including the buffers used to drive measurement equipment. The TX employs the sliding-IF scheme with first IF at one fifth of RF frequency. Results show a saturated power output of 12.7 dBm and a P1dB point at 11 dBm. It provides a bandwidth spanning from 48 GHz to 66 GHz.

Published in:

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Date of Conference:

17-18 Nov. 2011