By Topic

A Comparative Study of NBTI and RTN Amplitude Distributions in High- \kappa Gate Dielectric pMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Chiu, J.P. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chung, Y.T. ; Tahui Wang ; Min-Cheng Chen
more authors

Random telegraph noise (RTN) and negative bias temperature (NBT) stress-induced threshold voltage (Vt) fluctuations in high-κ gate dielectric and metal-gate pMOSFETs are investigated. We measured RTN amplitude distributions before and after NBT stress. RTN in poststressed devices exhibits a broader amplitude distribution than the prestress one. In addition, we trace a single trapped charge-induced ΔVt in NBT stress and find that the average ΔVt is significantly larger than a ΔVt caused by RTN. A 3-D atomistic simulation is performed to compare a single-charge-induced ΔVt by RTN and NBTI. In our simulation, the probability distribution of a NBT trapped charge in the channel is calculated from the reaction-diffusion model. Our simulation confirms that the NBT-induced ΔVt indeed has a larger distribution tail than RTN due to a current-path percolation effect.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )