Referenced Items are not available for this document.
Deep-submicrometer-gap CMOS-MEMS “composite” resonators fabricated using 0.18- μm-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 kΩ at 15.3 MHz. A simple maskless wet release process has been successfully transferred from a 0.35- μm platform to an advanced 0.18-μm version, capable of offering enhanced gap spacing and transduction area for CMOS-MEMS resonators monolithically integrated with high-performance CMOS circuitry. This proposed platform offers ease of use, fast turnaround time, low cost, convenient prototyping, and inherent MEMS-circuit integration, therefore showing great potential toward future integrated sensing and single-chip RF applications.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
2
)
Date of Publication: Feb. 2012
- Page(s):
- 272 - 274
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12489212
- Digital Object Identifier :
- 10.1109/LED.2011.2175695
- Product Type:
- Journals & Magazines
- Date of Publication :
- 26 December 2011
- Date of Current Version :
- 26 January 2012
- Issue Date :
- Feb. 2012
- Sponsored by :
- IEEE Electron Devices Society
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