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Advanced CMOS–MEMS Resonator Platform

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3 Author(s)
Cheng-Syun Li ; Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Li-Jen Hou ; Sheng-Shian Li

Deep-submicrometer-gap CMOS-MEMS “composite” resonators fabricated using 0.18- μm-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 kΩ at 15.3 MHz. A simple maskless wet release process has been successfully transferred from a 0.35- μm platform to an advanced 0.18-μm version, capable of offering enhanced gap spacing and transduction area for CMOS-MEMS resonators monolithically integrated with high-performance CMOS circuitry. This proposed platform offers ease of use, fast turnaround time, low cost, convenient prototyping, and inherent MEMS-circuit integration, therefore showing great potential toward future integrated sensing and single-chip RF applications.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )