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The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

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7 Author(s)
Devenyi, G.A. ; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada ; Woo, S.Y. ; Ghanad-Tavakoli, S. ; Hughes, R.A.
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We examine the role of vicinal surface steps in the formation and propagation of twins during the growth of epitaxial III-V thin films (GaAs, InP, GaSb, AlSb) on silicon substrates. This is achieved through the combined use of two-dimensional X-ray diffraction and conventional transmission electron microscopy techniques, which allow for both a macro and nano/micro characterization of the material systems. Observed is a systematic suppression of twins formed opposite to the tilt direction of vicinal substrates through a process of step-flow overgrowth of nucleated twins, and an enhancement of twins toward the tilt direction when the fastest growth planes are aligned with the step-flow. These results indicate a probable path to the enhancement of the electronic mobility of lateral devices based on III-V semiconductors on silicon.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 12 )

Date of Publication:

Dec 2011

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