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Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

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6 Author(s)
Chen, X.J. ; CEA-CNRS-UJF group « Nanophysique et semi-conducteurs », SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble F-38054, France ; Gayral, B. ; Sam-Giao, D. ; Bougerol, C.
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Catalyst-free GaN wires with 100–200 nm diameters are grown on bare c-sapphire substrates by a metal-organic vapor phase epitaxy approach using both low V/III ratio and V-III precursor flows that favor a reaction-limited growth regime. The polarity control of the initial seeds allows obtaining pencil-shape wires with very sharp pyramids at their top (∼5 nm diameter). These defect-free nanowires evidence excellent structural and optical properties as shown by a sharp photoluminescence linewidth (1–3 meV at 5 K).

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 25 )

Date of Publication:

Dec 2011

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