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Catalyst-free GaN wires with 100–200 nm diameters are grown on bare c-sapphire substrates by a metal-organic vapor phase epitaxy approach using both low V/III ratio and V-III precursor flows that favor a reaction-limited growth regime. The polarity control of the initial seeds allows obtaining pencil-shape wires with very sharp pyramids at their top (∼5 nm diameter). These defect-free nanowires evidence excellent structural and optical properties as shown by a sharp photoluminescence linewidth (1–3 meV at 5 K).
Published in:
Applied Physics Letters
(Volume:99
,
Issue:
25
)
Date of Publication: Dec 2011
- Page(s):
- 251910 - 251910-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3671365
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 December 2011
- Issue Date :
- Dec 2011
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