By Topic

Random work functions induced DC and dynamic characteristic fluctuations in 16-nm high-κ/metal gate CMOS device and digital circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hui-Wen Cheng ; Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yiming Li

We study nanosized metal grains induced DC and timing fluctuations in 16 nm high-κ/metal gate (HKMG) MOSFET devices. A localized work function fluctuation (LWKF) on device's DC/AC and CMOS inverter's characteristics is advanced using an experimentally validated 3D device simulation which cannot be well modeled using an averaged WKF (AWKF) method. DC characteristics estimated by the LWKF method are 1.5 and 1.6 times larger than that by the AWKF method for N- and P-MOSFETs, respectively, due to random grain number and position effects. The delay time of high-to-low and low-to-high of the CMOS inverter calculated by the AWKF method are underestimated by 1.29 and 1.19 times, compared with the LWKF method.

Published in:

Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on

Date of Conference:

19-20 July 2011