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Structural and electrical characterization of silicided Ni/Au contacts formed at low temperature (<300 °C) on p-type [001] silicon

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4 Author(s)
Alberti, A. ; CNR-IMM, Zona Industriale Strada VIII, 5 - 95121 Catania, Italy ; Badala, P. ; Pellegrino, G. ; Santangelo, A.

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Silicided Ni/Au contacts with very low contact resistance were realized on p-type [001] silicon at low temperature by ex-situ or, alternatively, by in situ annealing processes. During the ex-situ annealing, performed at 200  °C for 10 s, a uniformly thin (14 nm) Ni2Si layer was formed having an extremely flat interface with silicon thanks to the trans-rotational structure of the silicide. During the in situ annealing, promoted by a sputter etch processing (T < 300  °C), a 44 nm-thick silicide layer was formed as a mixture of trans-rotational NiSi and epitaxial NiSi2, domains. In both cases, using a low thermal budget has guaranteed a limited consumption of silicon during the reaction process and a good adhesion with the substrate avoiding gold contaminations. As a consequence of the presence of trans-rotational domains, wherein a pseudo-epitaxial relationship between the silicide and the silicon lattices is established, an ohmic behavior was observed in a wide range of substrate doping (3.5 × 1018 ÷ 3 × 1019 B/cm3) for both annealing processes (in situ and ex-situ). On the other hand, conventional TiNiAu and CrNiAu contacts showed, in the same range of B doping concentration, a rectifying behavior with systematically higher specific contact resistance values (Rc) compared to those of the Ni silicided contacts.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 12 )

Date of Publication:

Dec 2011

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