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Browse Journals & Magazines > Applied Physics Letters ...> Volume:99 Issue:9 Help

Carrier capture into semiconductor quantum dots via quantum wire barriers: Localization and thermionic emission effects

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5 Author(s)
Szeszko, J. ; Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland ; Zhu, Q. ; Gallo, P. ; Rudra, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3628320 

Carrier transport and capture paths via barriers of different dimensionality in AlGaAs/GaAs quantum wire (QWR)/quantum dot (QD) heterostructures, grown in inverted pyramids, are studied by photoluminescence (PL) spectroscopy. Evidence for thermally activated diffusion related to potential disorder in the QWR barriers and thermionic emission of carriers from the QD into the QWR barrier is observed in temperature dependent PL spectra. Similar activation energies for the thermionic emission are derived from the continuous-wave and time-resolved PL spectroscopy.

Published in:
Applied Physics Letters  (Volume:99 ,  Issue: 9 )

Date of Publication: Aug 2011

Page(s):
091910 - 091910-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3628320
Product Type:
Journals & Magazines
Date of Current Version :
26 December 2011
Issue Date :
Aug 2011

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