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The effects of annealing process under H2/N2 environment on the characteristics of low temperature solution processed InGaZnO thin film transistors

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4 Author(s)
Hwarim Im ; Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea ; Noh, J.A. ; Jang, Jongsu ; Yongtaek Hong

We demonstrated solution processed InGaZnO (IGZO) TFTs annealed at low temperature under H2/N2 environment and investigated the effects of annealing process under H2/N2 environment on the characteristics of low temperature solution processed InGaZnO TFTs.

Published in:

Photonics Conference (PHO), 2011 IEEE

Date of Conference:

9-13 Oct. 2011