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Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

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13 Author(s)
Tian, P. ; Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK ; Xie, E. ; Zheng Gong ; Chen, Z.
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By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

Published in:
Photonics Conference (PHO), 2011 IEEE

Date of Conference: 9-13 Oct. 2011

Page(s):
551 - 552
Print ISBN:
978-1-4244-8940-4
INSPEC Accession Number:
12469985
Conference Location :
Arlington, VA
Digital Object Identifier :
10.1109/PHO.2011.6110666
Product Type:
Conference Publications

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