Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3670336
Indium-zinc-oxide thin-film transistors (TFTs) with back-channel-etch (BCE) structure were demonstrated. A stacked structure of Mo/Al/Mo was used as the source/drain electrodes and patterned by a wet-etch-method. Good etching profile with few residues on the channel was obtained. The TFT showed a field effect mobility of 11.3 cm2 V-1 s-1 and a sub-threshold swing of 0.24 V/decade. The performance of this kind of TFT was better than that of the TFT with etch-stopper-layer structure, which was proved to be due to the lower contact resistance. The BCE-TFTs fabricated with this method have good prospect due to the advantage of low cost.
Published in:
Applied Physics Letters
(Volume:99
,
Issue:
25
)
Date of Publication: Dec 2011
- Page(s):
- 253501 - 253501-4
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3670336
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 December 2011
- Issue Date :
- Dec 2011
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
