By Topic

Uniaxial Stress-Modulated Electronic Properties of a Free-Standing InAs Nanowire

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Alam, K. ; Dept. of Electr. & Electron. Eng., East West Univ., Dhaka, Bangladesh

A tight-binding sp3d5s* orbital basis quantum simulation is performed to study the uniaxial stress-modulated electronic properties of an InAs nanowire in three different crystallographic directions. Over the entire range of axial stress used in this study, the wire exhibits a direct band gap under uniaxial stress in 〈100〉 and 〈111〉 directions; however, a direct to indirect transition is observed in 〈110〉 direction at a relatively large tensile stress. The band gap variation with stress is linear in 〈100〉 and 〈111〉 directions, and the gap is relatively insensitive to external stress in 〈110〉 direction. However, after the direct to indirect transition in 〈110〉 direction, the band gap is reduced with stress. The electron and hole effective masses show the highest dependence on external stress in 〈100〉 direction, and a big jump in the hole effective mass is observed in 〈100〉 and 〈110〉 directions under tensile stress. From the projection of normalized wave function to different orbitals, it is found that the direct to indirect transition in 〈110〉 direction and the discontinuity in the hole effective mass in (100) and 〈110〉 directions result from the change in top valence band wave function symmetry.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 3 )