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Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

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13 Author(s)
Kim, Kyung Min ; New Device Department, LG Display R&D Center, 1007, Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Republic of Korea ; Kim, Chi Wan ; Heo, Jae-Seok ; Na, Hyungil
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In this Letter, we described a solution-processed indium-gallium-zinc oxide thin-film transistors (TFTs) with a solution-processed aluminum oxide phosphate gate dielectric, fabricated at a maximum annealing temperature under 350 °C to be applicable to conventional fabrication process of flat-panel displays (FPDs). The solution-processed TFTs exhibited competitive device characteristics under 350 °C, including a field-effect mobility of 4.50 cm2/Vs, an on-to-off current ratio of ∼109, a threshold voltage of 2.34 V, and a subthreshold gate swing of 0.46 V/dec, making them applicable to the future backplane of FPDs.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 24 )

Date of Publication:

Dec 2011

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