The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.
Published in:
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Date of Conference: 2-7 Oct. 2011