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Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity

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8 Author(s)
Kirley, M. ; ECE Dept., Univ. of Wisconsin-Madison, Madison, WI, USA ; Yang, B. ; Willis, K. ; Weber, M.
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The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.

Published in:

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Date of Conference:

2-7 Oct. 2011