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Temperature-dependent conductivity of Mg-doped amorphous silicon film using terahertz time-domain spectroscopy

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3 Author(s)
Tapia, A.K.G. ; Grad. Sch. of Sci., Kobe Univ., Kobe, Japan ; Uchino, T. ; Tominaga, K.

The temperature-dependent conductivity of Mg-doped amorphous silicon film on sapphire substrate was studied by terahertz (THz) time-domain spectroscopy. The complex conductivity showed characteristics of charge localizations. The complex conductivity was fitted by the Drude-Smith model. The relaxation time increased at higher temperatures implying that mobility also increased. Lastly, plasma frequency, proportional to carrier concentration, appeared to be constant with temperature.

Published in:

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Date of Conference:

2-7 Oct. 2011

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