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Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas

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9 Author(s)
A. Di Gaspare ; CNR-IFN - Institute for Photonics and Nanotechnologies, Rome, 00156 Italy ; R. Casini ; M. Ortolani ; E. Giovine
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We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared.

Published in:

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Date of Conference:

2-7 Oct. 2011